LOW THRESHOLD CURRENT ALGAAS/GAAS RIB-WAVE-GUIDE SEPARATE-CONFINEMENT-HETEROSTRUCTURE DISTRIBUTED-FEEDBACK LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6

作者：

HONDA, K

HIRATA, S

OHATA, T

HORII, S

KOJIMA, C

机构：

[1] Sony Corp, Yokohama, Jpn, Sony Corp, Yokohama, Jpn

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

LITHOGRAPHY - Photolithography - SEMICONDUCTING ALUMINUM COMPOUNDS - WAVEGUIDES; OPTICAL;

D O I：

10.1109/JQE.1987.1073413

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaAs/GaAs rib-waveguide separate-confinement-heterostructure distributed-feedback (SCH-DFB) lasers emitting at 880 nm were fabricated by a two-step atmospheric pressure (MOCVD) metalorganic chemical vapor deposition) growth technique. A CW threshold current as low as 18 mA and an output power of over 10 mW/facet at room temperature were obtained. Also, single longitudinal and fundamental transverse modes were maintained up to more than twice the threshold current level.

引用

收藏

页码：839 / 842

页数：4

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