SINGLE-ELECTRON TUNNELING IN SYSTEMS OF SMALL JUNCTIONS COUPLED TO AN ELECTROMAGNETIC ENVIRONMENT

被引:35
作者
ODINTSOV, AA [1 ]
FALCI, G [1 ]
SCHON, G [1 ]
机构
[1] MV LOMONOSOV STATE UNIV,INST NUCL PHYS,MOSCOW 119899,USSR
来源
PHYSICAL REVIEW B | 1991年 / 44卷 / 23期
关键词
D O I
10.1103/PhysRevB.44.13089
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A simple approach is proposed to describe the influence of the electromagnetic environment on the sequential single-electron tunneling in systems of ultrasmall tunnel junctions. As an application we consider a system of two junctions in series coupled to an Ohmic environment. An increase of the environment resistance (i) widens the Coulomb-blockade region and (ii) suppresses the peaks that the conductance shows as a function of the gate voltage. The environment is responsible for an unusual temperature dependence of these peaks, which may explain recent experiments with GaAs lateral microstructures.
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页码:13089 / 13092
页数:4
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