LUMINESCENCE LINE SHAPE OF FREE EXCITONS IN PURE GE

被引：38

作者：

BENOITAL.C ^{[1
]}

VOOS, M ^{[1
]}

机构：

[1] ECOLE NORM SUPER,GRP PHYS SOLIDES,PARIS 5,FRANCE

来源：

关键词：

D O I：

10.1016/0038-1098(73)90859-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1257 / 1260

页数：4

共 18 条

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[2] BENOITALAGUILLA.C, TO BE PUBLISHED
[3] BENOITALAGUILLA.C, 1961, 5 P INT C SEM PHYS P, P426
[4] INHOMOGENEOUS BROADENING OF EDGE RECOMBINATION RADIATION
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 883 - &
[5] VALLEY-ORBIT SPLITTING OF INDIRECT FREE EXCITON IN SILICON
DEAN, PJ
YAFET, Y
HAYNES, JR
[J]. PHYSICAL REVIEW, 1969, 184 (03): : 837 - &
[6] INTENSITY OF OPTICAL ABSORPTION BY EXCITONS
ELLIOTT, RJ
[J]. PHYSICAL REVIEW, 1957, 108 (06): : 1384 - 1389
[7] GROSS FF, 1971, ZHETF PIS RED, V13, P332
[8] GROSS FF, 1971, JETP LETT, V13, P235
[9] ANALYSIS OF INTRINSIC RECOMBINATION RADIATION FROM SILICON AND GERMANIUM
HAYNES, JR
LAX, M
FLOOD, WF
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 : 392 - 396
[10] HAYNES JR, 1961, 5 P INT C PHYS SEM P, P423