MEASUREMENT OF SEMICONDUCTOR JUNCTION PARAMETERS USING LOCK-IN AMPLIFIERS

被引：6

作者：

LANYON, HPD

SAPEGA, AE

机构：

[1] WORCESTER POLYTECH INST,DEPT ELECT ENGN,WORCESTER,MA 01609

[2] TRIN COLL,DEPT ENGN,HARTFORD,CT 06106

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 05期

关键词：

D O I：

10.1109/T-ED.1973.17679

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：487 / 491

页数：5

共 9 条

[1]

Henisch H.K., 1957, Rectifying Semi-Conductor Contacts

[2]

Lanyon H. P. D., 1970, Physica Status Solidi A, V1, P535, DOI 10.1002/pssa.19700010318

[3] MOBILITY OF HOT HOLES IN POLYCRYSTALLINE SELENIUM [J].

LANYON, HPD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (01) :241-&

[4] ELECTROLUMINESCENCE FROM POLYCRYSTALLINE SELENIUM RECTIFIERS [J].

LANYON, HPD ;

RICHARDSON, RE .

SOLID STATE COMMUNICATIONS, 1970, 8 (05) :327-+

[5] IONIZATION COEFFICIENT FOR HOLES IN POLYCRYSTALLINE SELENIUM [J].

LANYON, HPD ;

RICHARDSON, RE .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02) :421-+

[6] RECTIFICATION AT METAL-SELENIUM INTERFACE [J].

LANYON, HPD ;

RICHARDSON, RE .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 7 (02) :411-+

[7]

LANYON HPD, 1970, PHYS STATUS SOLIDI, V42, P143

[8] CHARGE TRANSPORT THROUGH CADMIUM-SELENIUM INTERFACE [J].

SAPEGA, AE ;

LANYON, HPD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 11 (02) :713-&

[9]

Sze S.M., 1969, PHYSICS SEMICONDUCTO, P370

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