IONIZATION COEFFICIENT FOR HOLES IN POLYCRYSTALLINE SELENIUM

被引：5

作者：

LANYON, HPD

RICHARDSON, RE

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1971年 / 7卷 / 02期

关键词：

D O I：

10.1002/pssa.2210070215

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：421 / +

页数：1

共 15 条

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[2]

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[4]

Lanyon H. P. D., 1970, Physica Status Solidi A, V1, P535, DOI 10.1002/pssa.19700010318

[5]

Lanyon H. P. D., 1970, Physica Status Solidi A, V2, P287, DOI 10.1002/pssa.19700020215

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RICHARDSON, RE .

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[7] AVALANCHE BREAKDOWN IN SILICON [J].

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MCAFEE, KB .

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[10] PROBLEMS RELATED TO P-N JUNCTIONS IN SILICON [J].

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