BREAKDOWN IN SILICON

被引:49
作者
SENITZKY, B
MOLL, JL
机构
来源
PHYSICAL REVIEW | 1958年 / 110卷 / 03期
关键词
D O I
10.1103/PhysRev.110.612
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:612 / 620
页数:9
相关论文
共 10 条
  • [1] PHOTON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON
    CHYNOWETH, AG
    MCKAY, KG
    [J]. PHYSICAL REVIEW, 1956, 102 (02): : 369 - 376
  • [2] INTERNAL FIELD EMISSION IN SILICON P-N JUNCTIONS
    CHYNOWETH, AG
    MCKAY, KG
    [J]. PHYSICAL REVIEW, 1957, 106 (03): : 418 - 426
  • [3] AVALANCHE BREAKDOWN IN SILICON
    MCKAY, KG
    [J]. PHYSICAL REVIEW, 1954, 94 (04): : 877 - 884
  • [4] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM
    MCKAY, KG
    MCAFEE, KB
    [J]. PHYSICAL REVIEW, 1953, 91 (05): : 1079 - 1084
  • [5] MCKAY KG, COMMUNICATION
  • [6] VISIBLE LIGHT FROM A SILICON P-N JUNCTION
    NEWMAN, R
    [J]. PHYSICAL REVIEW, 1955, 100 (02): : 700 - 703
  • [7] SILICON P-N-JUNCTION ALLOY DIODES
    PEARSON, GL
    SAWYER, B
    [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1348 - 1351
  • [8] PEARSON GL, UNPUBLISHED
  • [9] MICROPLASMAS IN SILICON
    ROSE, DJ
    [J]. PHYSICAL REVIEW, 1957, 105 (02): : 413 - 418
  • [10] UHLIR, UNPUBLISHED