STOICHIOMETRY OF III-V COMPOUNDS

被引：54

作者：

NISHIZAWA, J ^{[1
]}

OYAMA, Y ^{[1
]}

机构：

[1] SEMICOND RES FDN,SEMICOND RES INST,AOBA KU,SENDAI 980,JAPAN

来源：

MATERIALS SCIENCE & ENGINEERING R-REPORTS | 1994年 / 12卷 / 6-8期

关键词：

D O I：

10.1016/0927-796X(94)90003-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Effects of stoichiometry control on electrical, optical and crystallographic features in III-V compounds are shown. The application of the optimum vapor pressure during annealing and crystal growth is shown to minimize the deviation from stoichiometric composition. Temperature-dependence of the optimum vapor pressure is also obtained. In view of the defect formation mechanism, existence of the stable interstitial arsenic atoms (I(As)) in GaAs is emphasized. The mechanism of stoichiometry control is discussed on the basis of the equality of chemical potentials and the change of saturating solubility in the liquidus phase as a function of the vapor pressure.

引用

页码：273 / 426

页数：154

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