DISLOCATION SCATTERING EFFECTS ON ELECTRON-MOBILITY IN INASSB

被引：28

作者：

EGAN, RJ ^{[1
]}

CHIN, VWL ^{[1
]}

TANSLEY, TL ^{[1
]}

机构：

[1] MACQUERIE UNIV,DEPT PHYS,SEMICOND SCI & TECHNOL LABS,N RYDE,NSW 2109,AUSTRALIA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 05期

关键词：

D O I：

10.1063/1.356244

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heteroepitaxial InAsSb is routinely prepared on InAs, InSb, or GaAs substrates under conditions favorable to dislocation formation, since the binary components are lattice mismatched by about 7.4%, and the ternary are mismatched to GaAs by between 7.2% and 14.5%, depending on composition. We here extend the description of electron scattering in InAsSb to include the effects of grain boundaries and dislocations. Comparison with experiment confirms that dislocation scattering has a strong effect on transport, while alloy scattering limits mobility in ternary samples grown with a minimum of defects.

引用

页码：2473 / 2476

页数：4

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