BULK BREAKDOWN OF HIGH-FIELD SILICON-DIELECTRIC SYSTEMS

被引：3

作者：

GRADINARU, G

SUDARSHAN, TS

机构：

[1] Department of Electrical and Computer Engineering, University of South Carolina, Columbia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preliminary results on bulk breakdown in high field silicon-dielectric systems are reported, In most cases the total breakdown of the above systems takes place by surface flashover, Bulk breakdown in high field semiconductor-dielectric systems is supposed to be produced only when one or more large filaments are developed in the bulk of the material due to a particular defect configuration, The characteristics of the bulk breakdown of the system are totally different from surface flashover, These differences are explained by the different physical nature of the two kinds of the breakdown of the system, one located in the material bulk and other at the semiconductor-dielectric interface.

引用

页码：1156 / 1165

页数：10

共 14 条

[1] Nunnally W.C., Photoconductive pulse power switches, Proc. 4th IEEE Pulsed Power Conf., pp. 620-623, (1983)
[2] Zutavern F.J., O'Malley M.W., Engineering limits of photoconductive semiconductor switches in pulsed power applications, Conf. Rec. 17th IEEE Power Modulator Symp., pp. 214-218, (1986)
[3] Gradinaru G., Sudarshan T.S., A physical model of the electrical breakdown in high field semiconductor-dielectric systems, Conf. Rec. 20th IEEE Power Modulator Symp., pp. 331-335, (1992)
[4] Gradinaru G., Madangarli V.P., Sudarshan T.S., The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systems, IEEE Trans. Electron Devices, 41, 7, pp. 1233-1238, (1994)
[5] Sudarshan T.S., Gradinaru G., Madangarli V.P., Sundararaman R., Vaidya M.R., PSPS breakdown limitation: New results and quality considerations, Proc. 5th SDIO/ONR Pulse Power Meeting, pp. 152-169, (1992)
[6] Gradinaru G., Madangarli V.P., Sudarshan T.S., Surface flashover in silicon-vacuum systems, IEEE Trans. Elec. Insul., 28, 4, pp. 555-565, (1993)
[7] Gradinaru G., Madangarli V.P., Sudarshan T.S., On the negative differential resistance effect in the high field semiconductor-dielectric systems, Appl. Phys. Lett., 61, pp. 55-57, (1992)
[8] Madangarli V.P., Gradinaru G., Sudarshan T.S., Zutavem F.J., Loubriel G.M., Improved voltage hold-off capability of photoconductive silicon in SF<sub>6</sub> environment, Conf. Rec. 20th IEEE Power Modulator Symp., pp. 297-300, (1992)
[9] Gradinaru G., Sudarshan T.S., Prebreakdown and breakdown phenomena in high field semiconductor-dielectric systems, J. Appl. Phys., 73, pp. 7643-7666, (1993)
[10] Williams P.F., Peterkin F.E., A mechanism for surface flasnover of semiconductors, Proc. 7th IEEE Pulsed Power Conf., pp. 890-893, (1989)

← 1 2 →