BULK BREAKDOWN OF HIGH-FIELD SILICON-DIELECTRIC SYSTEMS

被引：3

作者：

GRADINARU, G

SUDARSHAN, TS

机构：

[1] Department of Electrical and Computer Engineering, University of South Carolina, Columbia

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Preliminary results on bulk breakdown in high field silicon-dielectric systems are reported, In most cases the total breakdown of the above systems takes place by surface flashover, Bulk breakdown in high field semiconductor-dielectric systems is supposed to be produced only when one or more large filaments are developed in the bulk of the material due to a particular defect configuration, The characteristics of the bulk breakdown of the system are totally different from surface flashover, These differences are explained by the different physical nature of the two kinds of the breakdown of the system, one located in the material bulk and other at the semiconductor-dielectric interface.

引用

页码：1156 / 1165

页数：10