THERMOELASTIC ANALYSIS OF GAAS IN LEC GROWTH CONFIGURATION .4. EFFECTIVENESS OF TOP ASSEMBLY AND BOTTOM HEATERS IN CONTROL OF STRESSES IN LOW-PRESSURE SYSTEMS

被引：11

作者：

CAZINBOURGUIGNON, AM ^{[1
]}

MOTAKEF, S ^{[1
]}

机构：

[1] MIT, DEPT MECH ENGN, CAMBRIDGE, MA 02139 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 02期

关键词：

D O I：

10.1016/0022-0248(89)90538-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：390 / 404

页数：15

共 24 条

[1] THERMAL-CAPILLARY ANALYSIS OF CZOCHRALSKI AND LIQUID ENCAPSULATED CZOCHRALSKI CRYSTAL-GROWTH .1. SIMULATION [J].

DERBY, JJ ;

BROWN, RA .

JOURNAL OF CRYSTAL GROWTH, 1986, 74 (03) :605-624

[2]

Dobrosavljevic A., 1987, High Temperatures - High Pressures, V19, P303

[3] FORMATION OF DISLOCATIONS DURING LIQUID ENCAPSULATED CZOCHRALSKI GROWTH OF GAAS SINGLE-CRYSTALS [J].

DUSEAUX, M ;

JACOB, G .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :790-793

[4] TEMPERATURE PROFILE AND THERMAL-STRESS CALCULATIONS IN GAAS CRYSTALS GROWING FROM THE MELT [J].

DUSEAUX, M .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) :576-590

[5] FLUID MOTION IN THE ENCAPSULANT REGION OF THE LEC GROWTH SYSTEM [J].

HICKS, TW .

JOURNAL OF CRYSTAL GROWTH, 1987, 84 (04) :598-600

[6] ANALYTICAL REPRESENTATION OF THE SHAPE OF THE MENISCUS IN CZOCHRALSKI GROWTH [J].

HURLE, DTJ .

JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) :13-17

[7] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

[8] A COMPARATIVE-STUDY OF THERMAL-STRESS INDUCED DISLOCATION GENERATION IN PULLED GAAS, INP, AND SI CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR ;

NIELSEN, JW .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3331-3336

[9]

KELLY KW, THESIS MIT

[10] STRESSES NEAR THE SOLID-LIQUID INTERFACE DURING THE GROWTH OF A CZOCHRALSKI CRYSTAL [J].

LAMBROPOULOS, JC .

JOURNAL OF CRYSTAL GROWTH, 1987, 80 (02) :245-256

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