OPTICAL CHARACTERIZATION OF THE DEEP CR LEVEL IN GAAS

[1] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[2] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646

[3] CR2+(3D4) ABSORPTION IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985

[4] DEVEAUD B, 1980, REV PHYS APPL, V15, P671, DOI 10.1051/rphysap:01980001503067100

[5] IPPOLITOVA GK, 1975, FIZ TEKH POLUPROV, V9, P1308

[6] KOSCHEL WH, 1976, 13TH P INT C PHYS SE, P1065

[7] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS [J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22

[8] DETAILED ELECTRICAL CHARACTERIZATION OF THE DEEP CR ACCEPTOR IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (20): : 3855 - 3882

[9] MARTINEZ G, UNPUBLISHED

[10] NOUAILHAT A, UNPUBLISHED

[1] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[2] DEEP-LEVEL THERMAL SPECTROSCOPY AND DEEP-LEVEL OPTICAL SPECTROSCOPY - APPLICATION TO STUDY OF LATTICE-RELAXATION [J]. REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (03): : 631 - 646

[3] CR2+(3D4) ABSORPTION IN GAAS [J]. SOLID STATE COMMUNICATIONS, 1980, 33 (09) : 983 - 985

[4] DEVEAUD B, 1980, REV PHYS APPL, V15, P671, DOI 10.1051/rphysap:01980001503067100

[5] IPPOLITOVA GK, 1975, FIZ TEKH POLUPROV, V9, P1308

[6] KOSCHEL WH, 1976, 13TH P INT C PHYS SE, P1065

[7] EPR OF CR(3D3) IN GAAS - EVIDENCE FOR STRONG JAHN-TELLER EFFECTS [J]. PHYSICAL REVIEW B, 1977, 15 (01): : 17 - 22

[8] DETAILED ELECTRICAL CHARACTERIZATION OF THE DEEP CR ACCEPTOR IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (20): : 3855 - 3882

[9] MARTINEZ G, UNPUBLISHED

[10] NOUAILHAT A, UNPUBLISHED