THRESHOLD CARRIER DENSITY IN VERTICAL-CAVITY SURFACE-EMITTING LASERS

被引：6

作者：

BAE, JW ^{[1
]}

SHTENGEL, G ^{[1
]}

KUKSENKOV, D ^{[1
]}

TEMKIN, H ^{[1
]}

BRUSENBACH, P ^{[1
]}

机构：

[1] BANDGAP TECHNOL CORP,BROOMFIELD,CO 80021

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 16期

关键词：

D O I：

10.1063/1.113682

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combination of spontaneous emission lifetime and spectral measurements is used to estimate the threshold carrier density in small diameter gain guided vertical cavity surface emitting lasers. Differential spontaneous emission lifetimes measured below threshold are extrapolated to a τth=0.4 ns at threshold. The corresponding threshold carrier density is Nth=7.9×1018cm-3. The measured carrier densities are used to calculate spontaneous emission spectra. These are in agreement with the edge emission spectra obtained on cleaved laser chips. For the measured carrier density, we estimate the threshold gain at the emission wavelength of g=1640 cm-1.© 1995 American Institute of Physics.

引用

页码：2031 / 2033

页数：3

共 22 条

[1] ANALYTIC EXPRESSIONS FOR THE REFLECTION DELAY, PENETRATION DEPTH, AND ABSORPTANCE OF QUARTER-WAVE DIELECTRIC MIRRORS [J].