HIGH-FREQUENCY PROPERTIES OF ALL-NBN NANOBRIDGES WITH GAP STRUCTURE IN IV CURVES

被引:8
作者
HAMASAKI, K [1 ]
YAKIHARA, I [1 ]
WANG, Z [1 ]
YAMASHITA, T [1 ]
OKABE, Y [1 ]
机构
[1] UNIV TOKYO, DEPT ELECT & ELECTR ENGN, BUNKYO KU, TOKYO 113, JAPAN
关键词
D O I
10.1109/TMAG.1987.1064833
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1489 / 1492
页数:4
相关论文
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Yakihara T., 1986, Transactions of the Institute of Electronics and Communication Engineers of Japan, Section E (English), VE69, P427
[12]   NANOMETER BRIDGE WITH EPITAXIALLY DEPOSITED NBN ON MGO FILM [J].
YAMASHITA, T ;
HAMASAKI, K ;
KODAIRA, Y ;
KOMATA, T .
IEEE TRANSACTIONS ON MAGNETICS, 1985, 21 (02) :932-934
[13]  
YAMASHITA T, 1986, IN PRESS ADV CRYOG M, V32