THE RELIABILITY OF SEMICONDUCTOR RAM MEMORIES WITH ON-CHIP ERROR-CORRECTION CODING

被引：28

作者：

GOODMAN, RM

SAYANO, M

机构：

[1] California Institute of Technology, Pasadena, CA 91125

来源：

IEEE TRANSACTIONS ON INFORMATION THEORY | 1991年 / 37卷 / 03期

关键词：

D O I：

10.1109/18.79957

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The mean lifetimes are studied of semiconductor memories that have been encoded with an on-clip single error-correcting code along each row of memory cells. Specifically, the effects of single-cell soft errors and various hardware failures (single-cell, row, column, row-column, and entire chip) in the presence of soft-error scrubbing are examined. An expression is presented for computing the mean time to failure of such memories in the presence of these types of errors using the Poisson approximation; the expression has been confirmed experimentally to accurately model the mean time to failure of memories protected by single error-correcting codes. These analyses will enable the system designer to accurately assess the improvement in mean time to failure (MTTF) bought by the use of error-control coding.

引用

页码：884 / 896

页数：13

共 22 条

[1]

ASAKURA M, 1990, IEEE J SOLID-ST CIRC, V25, P5, DOI 10.1109/4.50276

[2] THE RELIABILITY OF SINGLE-ERROR PROTECTED COMPUTER MEMORIES [J].