FACTORS INFLUENCING SURFACE QUALITY AND IMPURITY DISTRIBUTION IN SILICON RIBBONS GROWN BY THE CAPILLARY ACTION SHAPING TECHNIQUE (CAST)

被引：21

作者：

CISZEK, TF ^{[1
]}

SCHWUTTKE, GH ^{[1
]}

YANG, KH ^{[1
]}

机构：

[1] IBM CORP,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-0248(80)90241-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：160 / 174

页数：15

共 20 条

[1]

Baghdadi A., 1978, Thirteenth IEEE Photovoltaic Specialists Conference1978, P363

[2] GROWTH OF WIDE, FLAT CRYSTALS OF SILICON WEB [J].

BARRETT, DL ;

MYERS, EH ;

HAMILTON, DR ;

BENNETT, AI .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (06) :952-&

[3]

BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98

[4]

Booker G. R., 1970, Modern diffraction and imaging techniques in material science, P613

[5] EDGE-DEFINED, FILM-FED GROWTH (EFG) OF SILICON RIBBONS [J].

CISZEK, TF .

MATERIALS RESEARCH BULLETIN, 1972, 7 (08) :731-&

[6] THERMAL BALANCING VIA DISTRIBUTED INERT-GAS STREAMS FOR HIGH MENISCUS RIBBON CRYSTAL-GROWTH [J].

CISZEK, TF ;

SCHWUTTKE, GH .

JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :483-489

[7] GROWTH AND CHARACTERIZATION OF SILICON RIBBONS PRODUCED BY A CAPILLARY ACTION SHAPING TECHNIQUE [J].

CISZEK, TF ;

SCHWUTTKE, GH .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 27 (01) :231-241

[8]

DERMATIS SN, 1963, IEEE T COMMUN ELECTR, V82, P94

[9] IMPURITY REDISTRIBUTION IN EFG [J].

KALEJS, JP .

JOURNAL OF CRYSTAL GROWTH, 1978, 44 (03) :329-344

[10] GROWTH OF CONTROLLED PROFILE CRYSTALS FROM MELT .2. EDGE-DEFINED, FILM-FED GROWTH (EFG) [J].

LABELLE, HE .

MATERIALS RESEARCH BULLETIN, 1971, 6 (07) :581-&

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