EVOLUTION OF SN ENVIRONMENT IN ALGAAS ALLOYS

被引：2

作者：

PANT, J

PANSEWICZ, K

ZHANG, J

HAYES, TM

WILLIAMSON, DL

THEIS, TN

KUECH, TF

GIBART, P

机构：

[1] COLORADO SCH MINES,DEPT PHYS,GOLDEN,CO 80401

[2] TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

[3] CNRS,PHYS SOLIDE & ENERGIE SOLAIRE LAB,F-06560 VALBONNE,FRANCE

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

ALGAAS; DX CENTER; DEEP LEVEL DEFECTS;

D O I：

10.7567/JJAPS.32S2.731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed fluorescence-detection XAFS measurements on Sn doped AlxGa1-xAs for x = 0.11 and 0.23. The Sn environment is found to change slowly with time.

引用

页码：731 / 733

页数：3