共 27 条
- [1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
- [4] HENNING JCM, 1986, SEMICOND SCI TECHNOL, V2, P1
- [6] SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L191 - L193
- [7] KITANO T, IN PRESS JPN J APPL
- [8] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L928 - L931
- [10] LANG DV, 1977, PHYS REV LETT, V39, P365