SMALL LATTICE-RELAXATION AT THE DX CENTER AS STUDIED BY EXTENDED X-RAY ABSORPTION FINE-STRUCTURE ON SE-DOPED ALGAAS

被引:37
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MIZUTA, M
KITANO, T
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10.1063/1.99071
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O59 [应用物理学];
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页码:126 / 128
页数:3
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  • [1] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS
    CHAND, N
    HENDERSON, T
    KLEM, J
    MASSELINK, WT
    FISCHER, R
    CHANG, YC
    MORKOC, H
    [J]. PHYSICAL REVIEW B, 1984, 30 (08): : 4481 - 4492
  • [2] TRANSFERABILITY OF PHASE-SHIFTS IN EXTENDED X-RAY ABSORPTION FINE-STRUCTURE
    CITRIN, PH
    EISENBERGER, P
    KINCAID, BM
    [J]. PHYSICAL REVIEW LETTERS, 1976, 36 (22) : 1346 - 1349
  • [3] EFFECT OF GROUP-V/III FLUX RATIO ON DEEP ELECTRON TRAPS IN ALXGA1-XAS (X=0.7) GROWN BY MOLECULAR-BEAM EPITAXY
    HAYAKAWA, T
    KONDO, M
    SUYAMA, T
    TAKAHASHI, K
    YAMAMOTO, S
    YANO, S
    HIJIKATA, T
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 788 - 790
  • [4] HENNING JCM, 1986, SEMICOND SCI TECHNOL, V2, P1
  • [5] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT
    HJALMARSON, HP
    DRUMMOND, TJ
    [J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 656 - 658
  • [6] SHALLOW AND DEEP DONOR LEVELS IN S-DOPED GA0.52IN0.48P GROWN BY CHLORIDE VPE
    KITAHARA, K
    HOSHINO, M
    KODAMA, K
    OZEKI, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L191 - L193
  • [7] KITANO T, IN PRESS JPN J APPL
  • [8] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS
    KOBAYASHI, KLI
    UCHIDA, Y
    NAKASHIMA, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L928 - L931
  • [9] TRAPPING CHARACTERISTICS AND A DONOR-COMPLEX (DX) MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY TRAPPING CENTER IN TE-DOPED ALXGA1-XAS
    LANG, DV
    LOGAN, RA
    JAROS, M
    [J]. PHYSICAL REVIEW B, 1979, 19 (02) : 1015 - 1030
  • [10] LANG DV, 1977, PHYS REV LETT, V39, P365