A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS

被引：38

作者：

KOBAYASHI, KLI

UCHIDA, Y

NAKASHIMA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 12期

关键词：

D O I：

10.1143/JJAP.24.L928

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L928 / L931

页数：4

共 10 条

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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L103 - L105
[10] INFLUENCE OF GROWTH-CONDITIONS AND ALLOY COMPOSITION ON DEEP ELECTRON TRAPS ON N-ALXGA1-XAS GROWN BY MBE
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