INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES

被引：10

作者：

ISHIKAWA, T

KONDO, K

HIYAMIZU, S

SHIBATOMI, A

机构：

[1] Fujitsu Lab Ltd, Atsugi, Jpn, Fujitsu Lab Ltd, Atsugi, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 06期

关键词：

D O I：

10.1143/JJAP.24.L408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L408 / L410

页数：3

共 8 条

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[8] ASSESSMENT OF PERSISTENT-PHOTOCONDUCTIVITY CENTERS IN MBE GROWN ALXGA1-XAS USING CAPACITANCE SPECTROSCOPY MEASUREMENTS [J].

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