THE EFFECT OF SUBSTRATE GROWTH TEMPERATURE ON DEEP LEVELS IN NORMAL-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：37

作者：

MCAFEE, SR

TSANG, WT

LANG, DV

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328516

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6165 / 6167

页数：3

共 23 条

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[5] THRESHOLD REDUCTION BY ADDITION OF PHOSPHORUS TO TERNARY LAYERS OF DOUBLE-HETEROSTRUCTURE GAAS LASERS [J].

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[6] INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :4137-4144

[7]

ILEGEMS M, 1977, J APPL PHYS, V48, P1298

[8] LOW-THRESHOLD DOUBLE HETEROJUNCTION ALGAAS-GAAS LASER-DIODES - THEORY AND EXPERIMENT [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3533-3537

[9]

LANG DJ, UNPUBLISHED

[10] STUDY OF ELECTRON TRAPS IN N-GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2558-2564

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