INFLUENCE OF GROWTH-CONDITIONS ON INCORPORATION OF DEEP LEVELS IN VPE GAAS

[1] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1204

[2] DEPENDENCE OF PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE ON TEMPERATURE OF ASCL3 [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (12) : 1775 - 1782

[3] ASHEN DJ, 5TH P INT S GAAS

[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[5] PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTOR STATES IN N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3882 - 3884

[6] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[7] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675

[8] BOIS D, 1974, J PHYS-PARIS, V35, P241

[9] BOIS D, 1972, THESIS U LYON

[10] CADORET R, COMMUNICATION

[1] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1204

[2] DEPENDENCE OF PROPERTIES OF EPITAXIAL GALLIUM-ARSENIDE ON TEMPERATURE OF ASCL3 [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (12) : 1775 - 1782

[3] ASHEN DJ, 5TH P INT S GAAS

[4] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) : 225 - &

[5] PHOTOLUMINESCENCE STUDY OF SHALLOW ACCEPTOR STATES IN N-TYPE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) : 3882 - 3884

[6] OPTICAL-ABSORPTION ON LOCALIZED LEVELS IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1974, 9 (10): : 4171 - 4177

[7] PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 22 (02): : 671 - 675

[8] BOIS D, 1974, J PHYS-PARIS, V35, P241

[9] BOIS D, 1972, THESIS U LYON

[10] CADORET R, COMMUNICATION