PHOTOCAPACITANCE STUDIES IN HIGH-PURITY GAAS

被引：22

作者：

BOIS, D ^{[1
]}

BOULOU, M ^{[1
]}

机构：

[1] LAB ELECTR & PHYS APPL,LIMEIL BREVANNES,FRANCE

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1974年 / 22卷 / 02期

关键词：

D O I：

10.1002/pssa.2210220234

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：671 / 675

页数：5

相关论文

共 12 条

[1] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 1.3 EV
BOIS, D
PINARD, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (01): : 85 - &
[2] BOIS D, TO BE PUBLISHED
[3] STRAPPING ANALYSIS IN GALLIUM ARSENIDE
CARBALLES, JC
LEBAILLY, J
[J]. SOLID STATE COMMUNICATIONS, 1968, 6 (03) : 167 - +
[4] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848
[5] TRANSIENT PHENOMENA IN CAPACITANCE AND REVERSE CURRENT IN A GAAS SCHOTTKY BARRIER DIODE
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (01) : 13 - +
[6] TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES
FURUKAWA, Y
ISHIBASHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (04) : 503 - +
[7] GUTKIN AA, 1971, SOV PHYS SEMICOND+, V5, P1006
[8] HUGUES FD, 1972, ACTA ELECTRONICA, V15, P43
[9] KUKIMOTO H, TO BE PUBLISHED
[10] DIRECT OBSERVATION OF MULTIPLICITY OF IMPURITY CHARGE STATES IN SEMICONDUCTORS FROM LOW-TEMPERATURE HIGH-FREQUENCY PHOTOCAPACITANCE
SAH, CT
ROSIER, LL
FORBES, L
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 316 - &