OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 1.3 EV

被引：11

作者：

BOIS, D

PINARD, P

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1971年 / 7卷 / 01期

关键词：

D O I：

10.1002/pssa.2210070108

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：85 / &

相关论文

共 17 条

[1] OPTICAL ABSORPTION DUE TO INTER-CONDUCTION-MINIMUM TRANSITIONS IN GALLIUM ARSENIDE
BALSLEV, I
[J]. PHYSICAL REVIEW, 1968, 173 (03): : 762 - &
[2] BOIS D, IN PRESS
[3] CARBALLES JC, 1967, THESIS CAEN
[4] FABRE E, 1970, CR ACAD SCI B PHYS, V270, P848
[5] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB
HAGA, E
KIMURA, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &
[6] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS .4. INTER-CONDUCTION BAND TRANSITIONS
HAGA, E
KIMURA, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (09) : 1596 - &
[7] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[8] OPTICAL PROPERTIES OF N-TYPE GAAS .I. DETERMINATION OF HOLE DIFFUSION LENGTH FROM OPTICAL ABSORPTION AND PHOTOLUMINESCENCE MEASUREMENTS
HWANG, CJ
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (09) : 3731 - &
[9] LECLERC P, PRIVATE COMMUNICATIO
[10] INFLUENCE OF IMPURITIES ON OPTICAL ABSORPTION EDGE OF GALLIUM ARSENIDE FROM 297 DEGREES TO 4 DEGREES K
LEFEVRE, J
BOIS, D
PINARD, P
DAVOINE, F
LECLERC, P
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1968, 58 (09) : 1230 - &