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COMBINED RESONANCE IN SEMICONDUCTORS

被引：3
作者：
RASHBA, EI
机构：
[1] L.D. Landau Institute for Theoretical Physics, Academy of Sciences, USSR
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1979年 / 11卷 / 1-3期
关键词：
D O I：
10.1016/0304-8853(79)90234-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The basic mechanisms of combined resonance in perfect and impurity crystals are considered. In this connection the experimental data are discussed in short. © 1979.
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页码：63 / 65
页数：3
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