CRITIQUE OF (TIME)1/3 KINETICS OF DEFECT FORMATION IN AMORPHOUS SI-H AND A POSSIBLE ALTERNATIVE MODEL - COMMENT ON KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON

被引：14

作者：

REDFIELD, D

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期

关键词：

D O I：

10.1063/1.100974

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：398 / 399

页数：2

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[1] EFFECT OF TEMPERATURE DURING ILLUMINATION ON ANNEALING OF METASTABLE DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
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[2] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON
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[3] PHYSICAL PROCESSES IN DEGRADATION OF AMORPHOUS SI-H
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[4] KINETICS, ENERGETICS, AND ORIGINS OF DEFECTS IN AMORPHOUS SI-H
REDFIELD, D
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (06) : 492 - 494
[5] EFFECTS OF DOPANTS AND DEFECTS ON LIGHT-INDUCED METASTABLE STATES IN A-SI-H
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AMER, NM
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[6] LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY
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[J]. PHYSICAL REVIEW B, 1985, 32 (01): : 23 - 47
[7] KINETICS OF THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
TSAI, CC
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (10) : 1075 - 1077
[8] RESOLUTION OF AMORPHOUS-SILICON THIN-FILM TRANSISTOR INSTABILITY MECHANISMS USING AMBIPOLAR TRANSISTORS
VANBERKEL, C
POWELL, MJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (14) : 1094 - 1096