ELECTRONIC TRANSPORT PROPERTIES IN SEMICONDUCTOR ALLOY (GAP)0.95(ZNSE)0.05

被引：10

作者：

GLICKSMAN, M

GUTMAN, D

YIM, WM

机构：

来源：

APPLIED PHYSICS LETTERS | 1970年 / 16卷 / 09期

关键词：

D O I：

10.1063/1.1653227

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：366 / +

页数：1

共 16 条

[1]

BERTOTI I, 1966, INT C LUMINESCENCE, P235

[2]

BERTOTI I, 1966, INT C LUMINESCENCE, P241

[3]

BLOOM SD, TO BE PUBLISHED

[4] THEORY OF DIPOLE SCATTERING IN SEMICONDUCTORS [J].

BOARDMAN, AD .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1965, 85 (543P) :141-&

[5]

Brooks H., 1955, ADV ELECTRONICS ELEC, V7, P87

[6] ENERGY BANDS IN ONE-DIMENSIONAL APERIODIC POTENTIALS [J].

ECONOMOU, EN ;

COHEN, MH .

PHYSICAL REVIEW LETTERS, 1970, 24 (05) :218-+

[7] ANOMALOUS ELECTRICAL PROPERTIES OF SOLUTION-GROWN P-TYPE GAP [J].

FOSTER, LM ;

WOODS, JF ;

LEWIS, JE .

APPLIED PHYSICS LETTERS, 1969, 14 (01) :25-&

[8]

GORYUNOVA NA, 1959, SOV PHYS-SOL STATE, V1, P307

[9] SYNTHESIS AND SOME PROPERTIES OF ZNSE - GAAS SOLID SOLUTIONS [J].

KU, SM ;

BODI, LJ .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1968, 29 (12) :2077-&

[10] ELECTRICAL PROPERTIES OF GALLIUM PHOSPHIDE [J].

MIYAUCHI, T ;

SONOMURA, H ;

YAMAMOTO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1967, 6 (12) :1409-+

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