ON THE CHARACTERISTICS OF NARROW-BAND RESONANT MODULATION OF SEMICONDUCTOR-LASERS BEYOND RELAXATION OSCILLATION FREQUENCY

被引：8

作者：

LAU, KY

GEORGES, JB

机构：

[1] Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 11期

关键词：

D O I：

10.1063/1.109655

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We consider practical issues related to narrow-band resonant modulation of laser diodes at frequencies above relaxation oscillation. We established the limits to the performance of this approach based on bandwidth, noise, and intermodulation distortion considerations, as well as the proper trade-offs between these three quantities.

引用

收藏

页码：1459 / 1461

页数：3

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