DIAMOND THIN-FILM GROWTH BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION AND INVESTIGATION BY SCANNING TUNNELING FORCE MICROSCOPY AND SCANNING ELECTRON-MICROSCOPY

被引：8

作者：

AHN, J

TAN, FH

TAN, HS

机构：

[1] School of Electrical and Electronic Engineering, Nanyang Technological University

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 1993年 / 12卷 / 10期

关键词：

D O I：

10.1007/BF00626719

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：775 / 778

页数：4

共 8 条

[1]

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[4]

DEVERIS RC, 1987, 86CRD247 GEN EL CORP

[5] EARLY FORMATION OF CHEMICAL VAPOR-DEPOSITION DIAMOND FILMS [J].

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APPLIED PHYSICS LETTERS, 1990, 57 (25) :2646-2648

[6]

WEDLAKE RJ, PROPERTIES DIAMOND

[7] STRUCTURAL AND CHEMICAL CHARACTERIZATION OF DIAMOND FILMS AND DIAMOND SUBSTRATE INTERFACES [J].

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HORIUCHI, T .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1819-1820

[8] CHARACTERIZATION OF DIAMOND THIN-FILMS - DIAMOND PHASE IDENTIFICATION, SURFACE-MORPHOLOGY, AND DEFECT STRUCTURES [J].

WILLIAMS, BE ;

GLASS, JT .

JOURNAL OF MATERIALS RESEARCH, 1989, 4 (02) :373-384

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