THE BEHAVIOR OF DISLOCATIONS IN GAAS SUBSTRATES DURING THE GROWTH OF GAXAL1-XAS EPITAXIAL LAYERS

被引：7

作者：

BOOYENS, H ^{[1
]}

BASSON, JH ^{[1
]}

SMALL, MB ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 06期

关键词：

D O I：

10.1063/1.329263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：4112 / 4114

页数：3

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