PHOTO-LUMINESCENCE IN HEAVILY DOPED GAAS .1. TEMPERATURE AND HOLE-CONCENTRATION DEPENDENCE

[1] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210

[2] Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5

[3] AUGER RECOMBINATION IN GAAS AN GASB [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855

[4] CARDONA M, 1969, MODULATION SPECTROSC, P67

[5] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[6] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[7] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[8] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[9] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[10] IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GAAS (RECOMBINATION RADIATION FAST ELECTRON BEAM PUMPING IMPURITY EFFECTS E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 151 - &

[1] ELECTRONIC IMPURITY LEVELS IN SEMICONDUCTORS [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (09) : 1099 - 1210

[2] Bebb H B., 1972, SEMICOND SEMIMET, V8, P181, DOI DOI 10.1016/S0080-8784(08)62345-5

[3] AUGER RECOMBINATION IN GAAS AN GASB [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 843 - 855

[4] CARDONA M, 1969, MODULATION SPECTROSC, P67

[5] Casey H.C., 1973, ATOMIC DIFFUSION SEM, P351

[6] ANALYSIS OF N-TYPE GAAS WITH ELECTRON-BEAM-EXCITED RADIATIVE RECOMBINATION [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) : 149 - +

[7] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643

[8] CONDENSATION OF EXCITONS IN GERMANIUM AND SILICON [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (17): : 2369 - +

[9] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[10] IDENTIFICATION OF LASER TRANSITIONS IN ELECTRON-BEAM-PUMPED GAAS (RECOMBINATION RADIATION FAST ELECTRON BEAM PUMPING IMPURITY EFFECTS E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 151 - &