LOCALLY DISORDERED LATTICES IN STRONG AC ELECTRIC-FIELDS

被引：52

作者：

HONE, DW

HOLTHAUS, M

机构：

[1] UNIV CALIF SANTA BARBARA,CTR QUANTIZED ELECTR STRUCT,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,CTR FREE ELECTRON LASER STUDIES,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1993年 / 48卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.48.15123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We develop a formalism to study the role of local defects in tight-binding systems in the presence of a strong external ac electric field. It is found that the appearance and disappearance of localized states, as well as their localization lengths, can be controlled by the amplitude or frequency of the driving field. The theory is illustrated by numerical model calculations for imperfect semiconductor superlattices in far-infrared laser fields.

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页码：15123 / 15131

页数：9

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