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MICROWAVE CHARACTERIZATION OF GAAS MESFET AND VERIFICATION OF DEVICE MODEL

被引：2
作者：
COOPER, JF
GUPTA, MS
机构：
[1] MIT,ELECTR RES LAB,CAMBRIDGE,MA 02139
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 03期
关键词：
D O I：
10.1109/JSSC.1977.1050905
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：325 / 329
页数：5
相关论文
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[3]   FIELD DISTRIBUTION IN JUNCTION FIELD-EFFECT TRANSISTORS AT LARGE DRAIN VOLTAGES [J].
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) :273-281
[4]   MICROWAVE FIELD-EFFECT TRANSISTORS 1976 [J].
LIECHTI, CA .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :279-330
[5]   PERFORMANCE OF GAAS MESFETS AT LOW-TEMPERATURES [J].
LIECHTI, CA ;
LARRICK, RB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) :376-381
[6]  
PENFIELD P, 1971, MARTHA USERS MANUAL
[7]  
PUCEL RA, 1975, ADV ELECTRONICS, V38
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