LIGHT-INDUCED DEGRADATION AT THE SILICON SILICON DIOXIDE INTERFACE

被引：30

作者：

GRUENBAUM, PE

SINTON, RA

SWANSON, RM

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 17期

关键词：

D O I：

10.1063/1.99130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1407 / 1409

页数：3

共 9 条

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