A NEW HYDROGEN SENSOR BASED ON A PT/GAAS SCHOTTKY DIODE

被引：41

作者：

LECHUGA, LM

CALLE, A

GOLMAYO, D

TEJEDOR, P

BRIONES, F

机构：

[1] Centro Nacional de Microelectrónica, 28006 Madrid

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1991年 / 138卷 / 01期

关键词：

D O I：

10.1149/1.2085527

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new hydrogen-sensitive detector based on a Pt/GaAs Schottky diode has been fabricated. The devices have been characterized by dark current-voltage and capacitance-voltage measurements, as a function of temperature and gas phase composition. At 150-degrees-C, the detection limit for hydrogen is 6 ppm in a nitrogen environment and 200 ppm in air.

引用

页码：159 / 162

页数：4

共 9 条

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