MOS AND SCHOTTKY DIODE GAS SENSORS USING TRANSITION-METAL ELECTRODES

被引：53

作者：

POTEAT, TL ^{[1
]}

LALEVIC, B ^{[1
]}

KULIYEV, B ^{[1
]}

YOUSUF, M ^{[1
]}

CHEN, M ^{[1
]}

机构：

[1] RUTGERS STATE UNIV, DEPT ELECT ENGN, PISCATAWAY, NJ 08854 USA

来源：

关键词：

D O I：

10.1007/BF02651642

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：181 / 214

页数：34

共 19 条

[1] Alefeld G., 1978, HYDROGEN METALS
[2] Alefeld G., 1978, HYDROGEN METALS
[3] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES
BERGLUND, CN
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) : 701 - +
[4] CARD HC, 1971, J PHYS D, V4, P1586
[5] CHEUNG PW, 1978, THEORY DESIGN BIOMED
[6] ADSORPTION OF HYDROGEN ON PALLADIUM SINGLE-CRYSTAL SURFACES
CONRAD, H
ERTL, G
LATTA, EE
[J]. SURFACE SCIENCE, 1974, 41 (02) : 435 - 446
[7] LOW-ENERGY ELECTRON-DIFFRACTION AND WORK FUNCTION CHANGE STUDIES OF ADSORPTION OF SUBSTITUTED AROMATIC-MOLECULES ON (111) AND (100) CRYSTAL FACES OF PLATINUM
GLAND, JL
SOMORJAI, GA
[J]. SURFACE SCIENCE, 1974, 41 (02) : 387 - 402
[8] HYDROGEN-SENSITIVE SCHOTTKY-BARRIER DIODES
ITO, K
[J]. SURFACE SCIENCE, 1979, 86 (JUL) : 345 - 352
[9] Jaeckel R., 1963, VACUUM, V13, P509, DOI [10.1016/0042-207X(63)90537-2, DOI 10.1016/0042-207X(63)90537-2]
[10] KERAMATI B, 1978, 1978 P INT TOP C YOR