THE DEVELOPMENT OF HETEROJUNCTION INTEGRATED INJECTION LOGIC

被引：22

作者：

YUAN, HT ^{[1
]}

SHIH, HD ^{[1
]}

DELANEY, J ^{[1
]}

FULLER, C ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DEF SYST & ELECTR GRP,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期

关键词：

D O I：

10.1109/16.40889

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2083 / 2092

页数：10

共 21 条

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[3]

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[10] MORPHOLOGICAL-STUDIES OF OVAL DEFECTS IN GAAS EPITAXIAL LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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