REALIZATION OF HIGH MOBILITY IN INVERTED ALXGA1-XAS/GAAS HETEROJUNCTIONS

被引：23

作者：

CHO, NM ^{[1
]}

KIM, DJ ^{[1
]}

MADHUKAR, A ^{[1
]}

NEWMAN, PG ^{[1
]}

SMITH, DD ^{[1
]}

AUCOIN, T ^{[1
]}

IAFRATE, GJ ^{[1
]}

机构：

[1] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 24期

关键词：

D O I：

10.1063/1.99574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2037 / 2039

页数：3

共 14 条

[1] ELECTRON CONCENTRATIONS AND MOBILITIES IN SELECTIVELY DOPED ALGAAS-GAAS-ALGAAS DOUBLE HETEROSTRUCTURES
BURKHARD, H
SCHLAPP, W
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[J]. SURFACE SCIENCE, 1986, 174 (1-3) : 387 - 391
[2] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
CHEN, P
MADHUKAR, A
KIM, JY
LEE, TC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 650 - 652
[3] SPECULAR BEAM INTENSITY BEHAVIOR IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF AL0.3GA0.7AS ON GAAS(100) AND IMPLICATIONS FOR INVERTED INTERFACES
CHO, NM
CHEN, P
MADHUKAR, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (26) : 1909 - 1911
[4] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[5] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
DRUMMOND, TJ
KLEM, J
ARNOLD, D
FISCHER, R
THORNE, RE
LYONS, WG
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[6] HEIBLUM M, 1985, J VAC SCI TECHNOL B, V3, P820, DOI 10.1116/1.583110
[7] KINETIC PROCESSES IN MOLECULAR-BEAM EPITAXY OF GAAS(100) AND ALAS(100) EXAMINED VIA STATIC AND DYNAMIC BEHAVIOR OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITIES
LEE, TC
YEN, MY
CHEN, P
MADHUKAR, A
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 884 - 888
[8] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[9] MADHUKAR A, 1988, CRC REV SOLID STATE, V41, P1
[10] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227

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