ELECTRON CONCENTRATIONS AND MOBILITIES IN SELECTIVELY DOPED ALGAAS-GAAS-ALGAAS DOUBLE HETEROSTRUCTURES

被引:18
作者
BURKHARD, H
SCHLAPP, W
WEIMANN, G
机构
关键词
D O I
10.1016/0039-6028(86)90439-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:387 / 391
页数:5
相关论文
共 10 条
  • [1] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
    DRUMMOND, TJ
    KLEM, J
    ARNOLD, D
    FISCHER, R
    THORNE, RE
    LYONS, WG
    MORKOC, H
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
  • [2] FRITZSCHE D, 1985, 15TH EUR SOL STAT DE
  • [3] HEIBLUM H, 1984, APPL PHYS LETT, V44, P1046
  • [4] CONCENTRATION OF ELECTRONS IN SELECTIVELY DOPED GAALAS/GAAS HETEROJUNCTION AND ITS DEPENDENCE ON SPACER-LAYER THICKNESS AND GATE ELECTRIC-FIELD
    HIRAKAWA, K
    SAKAKI, H
    YOSHINO, J
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (03) : 253 - 255
  • [5] MBE GROWTH AND PROPERTIES OF ALGAAS GAAS ALGAAS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION STRUCTURES WITH VERY HIGH CONDUCTIVITY
    INOUE, K
    SAKAKI, H
    YOSHINO, J
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (10): : L767 - L769
  • [6] EFFECTS OF SUBSTRATE TEMPERATURES ON THE DOPING PROFILES OF SI IN SELECTIVELY DOPED ALGAAS/GAAS/ALGAAS DOUBLE-HETEROJUNCTION STRUCTURES
    INOUE, K
    SAKAKI, H
    YOSHINO, J
    YOSHIOKA, Y
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 973 - 975
  • [7] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
    INOUE, K
    SAKAKI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
  • [8] MORKOC H, 1982, J APPL PHYS, V53, P1032
  • [9] ELECTRONIC STATES IN SELECTIVELY SI-DOPED N-ALGAAS/GAAS/N-ALGAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY MBE
    SASA, S
    SAITO, J
    NANBU, K
    ISHIKAWA, T
    HIYAMIZU, S
    INOUE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04): : L281 - L283
  • [10] WEIMANN G, 1985, APPL PHYS LETT, V46, P441