ELECTRONIC STATES IN SELECTIVELY SI-DOPED N-ALGAAS/GAAS/N-ALGAAS SINGLE QUANTUM WELL STRUCTURES GROWN BY MBE

被引：26

作者：

SASA, S ^{[1
]}

SAITO, J ^{[1
]}

NANBU, K ^{[1
]}

ISHIKAWA, T ^{[1
]}

HIYAMIZU, S ^{[1
]}

INOUE, M ^{[1
]}

机构：

[1] OSAKA INST TECHNOL,DEPT ELECT ENGN,ASAHI KU,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 04期

关键词：

D O I：

10.1143/JJAP.24.L281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L281 / L283

页数：3

共 9 条

[1] FITTING AUTOREGRESSIVE MODELS FOR PREDICTION
AKAIKE, H
[J]. ANNALS OF THE INSTITUTE OF STATISTICAL MATHEMATICS, 1969, 21 (02) : 243 - &
[2] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
KOPP, W
MORKOC, H
[J]. ELECTRONICS LETTERS, 1981, 17 (13) : 442 - 444
[3] EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE
HIYAMIZU, S
MIMURA, T
FUJII, T
NANBU, K
HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L245 - L248
[4] IMPROVED ELECTRON-MOBILITY HIGHER THAN 106 CM2/VS IN SELECTIVELY DOPED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
SAITO, J
NANBU, K
ISHIKAWA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L609 - L611
[5] A NEW HIGHLY-CONDUCTIVE (ALGA)AS/GAAS/(ALGA)AS SELECTIVELY-DOPED DOUBLE-HETEROJUNCTION FIELD-EFFECT TRANSISTOR (SD-DH-FET)
INOUE, K
SAKAKI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (02): : L61 - L63
[6] INOUE T, 1983, JPN J APPL PHYS S221, V22, P357
[7] THEORY OF AN EXPERIMENT FOR MEASURING THE MOBILITY AND DENSITY OF CARRIERS IN THE SPACE-CHARGE REGION OF A SEMICONDUCTOR SURFACE
PETRITZ, RL
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1254 - 1262
[8] DEPENDENCE OF THE MOBILITY AND THE CONCENTRATION OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/N-ALXGA1-XAS HETEROSTRUCTURE ON THE ALAS MOLE FRACTION
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L79 - L81
[9] IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
SASA, S
SAITO, J
NANBU, K
ISHIKAWA, T
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L573 - L575

← 1 →