IMPROVED 2DEG MOBILITY IN INVERTED GAAS/N-ALGAAS HETEROSTRUCTURES GROWN BY MBE

被引：39

作者：

SASA, S

SAITO, J

NANBU, K

ISHIKAWA, T

HIYAMIZU, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 08期

关键词：

D O I：

10.1143/JJAP.23.L573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L573 / L575

页数：3

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