MODERATE MOBILITY ENHANCEMENT IN SINGLE PERIOD ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH GAAS ON TOP

被引：12

作者：

MORKOC, H ^{[1
]}

DRUMMOND, TJ ^{[1
]}

FISCHER, R ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS, COORDINATED SCI LAB, URBANA, IL 61801 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 04期

关键词：

D O I：

10.1063/1.330992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3321 / 3323

页数：3

共 14 条

[1] TRANSPORT-PROPERTIES IN GAAS-ALXGA1-XAS HETEROSTRUCTURES AND MESFET APPLICATION
DELESCLUSE, P
LAVIRON, M
CHAPLART, J
DELAGEBEAUDEUF, D
LINH, NT
[J]. ELECTRONICS LETTERS, 1981, 17 (10) : 342 - 344
[2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[3] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[4] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE
HIYAMIZU, S
MIMURA, T
FUJII, T
NANB, K
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807
[5] HALL-EFFECT AND MOBILITY IN HETEROJUNCTION LAYERS
KEEVER, M
DRUMMOND, TJ
MORKOC, H
HESS, K
STREETMAN, BG
LUDOWISE, M
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1034 - 1036
[6] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE
MORKOC, H
WITKOWSKI, LC
DRUMMOND, TJ
STANCHAK, CM
CHO, AY
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754
[7] TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
MORKOC, H
CHO, AY
RADICE, C
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) : 4882 - 4884
[8] CURRENT TRANSPORT IN MODULATION DOPED (AL,GA)AS-GAAS HETEROSTRUCTURES - APPLICATIONS TO HIGH-SPEED FETS
MORKOC, H
[J]. ELECTRON DEVICE LETTERS, 1981, 2 (10): : 260 - 261
[9] MORKOC H, 1982, J ELECTROCHEM SO APR
[10] PIANETTE P, 1977, 7TH P INT VAC C 23RD, P615

← 1 2 →