CURRENT TRANSPORT IN MODULATION DOPED (AL,GA)AS-GAAS HETEROSTRUCTURES - APPLICATIONS TO HIGH-SPEED FETS

被引：28

作者：

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

ELECTRON DEVICE LETTERS | 1981年 / 2卷 / 10期

关键词：

D O I：

10.1109/EDL.1981.25425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：260 / 261

页数：2

共 15 条

[1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
LAVIRON, M
CHAPLART, J
LINH, NT
[J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668
[2] DELESCLUSE P, 1981, FEB WORKSH COMP SEM
[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[4] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[5] PROSPECTS FOR ULTRAHIGH-SPEED VLSI GAAS DIGITAL LOGIC
EDEN, RC
WELCH, BM
ZUCCA, R
LONG, SI
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 299 - 317
[6] NEGATIVE DIFFERENTIAL RESISTANCE THROUGH REAL-SPACE ELECTRON-TRANSFER
HESS, K
MORKOC, H
SHICHIJO, H
STREETMAN, BG
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 469 - 471
[7] TIME-DEPENDENCE OF CURRENT AT HIGH ELECTRIC-FIELDS IN ALXGA1-XAS-GAAS HETEROJUNCTION LAYERS
KEEVER, M
DRUMMOND, T
HESS, K
MORKOC, H
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1981, 17 (02) : 93 - 94
[8] MICROWAVE FIELD-EFFECT TRANSISTORS 1976
LIECHTI, CA
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 279 - 330
[9] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS
MIMURA, T
HIYAMIZU, S
FUJII, T
NANBU, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227
[10] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE
MORKOC, H
WITKOWSKI, LC
DRUMMOND, TJ
STANCHAK, CM
CHO, AY
STREETMAN, BG
[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754

← 1 2 →