KINETIC PROCESSES IN MOLECULAR-BEAM EPITAXY OF GAAS(100) AND ALAS(100) EXAMINED VIA STATIC AND DYNAMIC BEHAVIOR OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITIES

被引：11

作者：

LEE, TC

YEN, MY

CHEN, P

MADHUKAR, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573998

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：884 / 888

页数：5

共 18 条

[1] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
CHEN, P
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KIM, JY
LEE, TC
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[2] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY
GHAISAS, SV
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[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546
[3] MOLECULAR-BEAM EPITAXIAL-GROWTH AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THIN GAAS/INAS(100) MULTIPLE QUANTUM WELL STRUCTURES
GRUNTHANER, FJ
YEN, MY
FERNANDEZ, R
LEE, TC
MADHUKAR, A
LEWIS, BF
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 983 - 985
[4] GROWTH OF HIGH-PURITY GAAS-LAYERS BY MOLECULAR-BEAM EPITAXY
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[J]. APPLIED PHYSICS LETTERS, 1983, 42 (01) : 66 - 68
[5] LEE TH, SURF SCI
[6] REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS
LEWIS, BF
GRUNTHANER, FJ
MADHUKAR, A
LEE, TC
FERNANDEZ, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (05): : 1317 - 1322
[7] RHEED OSCILLATION STUDIES OF MBE GROWTH-KINETICS AND LATTICE MISMATCH STRAIN-INDUCED EFFECTS DURING INGAAS GROWTH ON GAAS(100)
LEWIS, BF
LEE, TC
GRUNTHANER, FJ
MADHUKAR, A
FERNANDEZ, R
MASERJIAN, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (03): : 419 - 424
[8] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[9] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY
MADHUKAR, A
GHAISAS, SV
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 247 - 249
[10] MADHUKAR A, 1985, UNPUB JUN EL MAT C B

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