REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY BEHAVIOR DURING HOMOEPITAXIAL MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND IMPLICATIONS FOR GROWTH-KINETICS AND MECHANISMS

被引：109

作者：

LEWIS, BF ^{[1
]}

GRUNTHANER, FJ ^{[1
]}

MADHUKAR, A ^{[1
]}

LEE, TC ^{[1
]}

FERNANDEZ, R ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90089

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 05期

关键词：

D O I：

10.1116/1.582986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1317 / 1322

页数：6

共 16 条

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[8] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY
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[9] CALCULATION OF MEED INTENSITIES IN THE 5-10 KEV ELECTRON-ENERGY RANGE
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[10] DYNAMIC RHEED OBSERVATIONS OF THE MBE GROWTH OF GAAS - SUBSTRATE-TEMPERATURE AND BEAM AZIMUTH EFFECTS
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 179 - 184

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