SPECULAR BEAM INTENSITY BEHAVIOR IN REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF AL0.3GA0.7AS ON GAAS(100) AND IMPLICATIONS FOR INVERTED INTERFACES

被引：12

作者：

CHO, NM ^{[1
]}

CHEN, P ^{[1
]}

MADHUKAR, A ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 26期

关键词：

D O I：

10.1063/1.97683

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1909 / 1911

页数：3

共 9 条

[1] OPTIMAL SURFACE AND GROWTH FRONT OF III-V SEMICONDUCTORS IN MOLECULAR-BEAM EPITAXY - A STUDY OF KINETIC PROCESSES VIA REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION SPECULAR BEAM INTENSITY MEASUREMENTS ON GAAS(100)
CHEN, P
KIM, JY
MADHUKAR, A
CHO, NM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04): : 890 - 895
[2] EXISTENCE OF METASTABLE STEP DENSITY DISTRIBUTIONS ON GAAS(100) SURFACES AND THEIR CONSEQUENCE FOR MOLECULAR-BEAM EPITAXIAL-GROWTH
CHEN, P
MADHUKAR, A
KIM, JY
LEE, TC
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (10) : 650 - 652
[3] USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS
DRUMMOND, TJ
KLEM, J
ARNOLD, D
FISCHER, R
THORNE, RE
LYONS, WG
MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (07) : 615 - 617
[4] IMPROVEMENT OF THE INVERTED GAAS/ALGAAS HETEROINTERFACE
FISCHER, R
MASSELINK, WT
SUN, YL
DRUMMOND, TJ
CHANG, YC
KLEIN, MV
MORKOV, H
ANDERSON, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (02): : 170 - 174
[5] PHOTOLUMINESCENCE AND REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DYNAMICS STUDY OF THE INTERFACES IN MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.33GA0.67AS(100) SINGLE QUANTUM-WELLS
KIM, JY
CHEN, P
VOILLOT, F
MADHUKAR, A
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (12) : 739 - 741
[6] ROLE OF SURFACE KINETICS AND INTERRUPTED GROWTH DURING MOLECULAR-BEAM EPITAXIAL-GROWTH OF NORMAL AND INVERTED GAAS/ALGAAS(100) INTERFACES - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY DYNAMICS STUDY
MADHUKAR, A
LEE, TC
YEN, MY
CHEN, P
KIM, JY
GHAISAS, SV
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1148 - 1150
[7] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION
MORKOC, H
DRUMMOND, TJ
THORNE, RE
KOPP, W
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (12) : L913 - L916
[8] GROWTH-KINETICS OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS/AL0.3GA0.7AS (100) NORMAL AND INVERTED INTERFACES IN THIN SINGLE QUANTUM-WELL STRUCTURES EXAMINED VIA PHOTOLUMINESCENCE STUDIES
VOILLOT, F
MADHUKAR, A
TANG, WC
THOMSEN, M
KIM, JY
CHEN, P
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (04) : 194 - 196
[9] OBSERVATION OF KINETICALLY CONTROLLED MONOLAYER STEP HEIGHT DISTRIBUTION AT NORMAL AND INVERTED INTERFACES IN ULTRATHIN GAAS/ALXGA1-X AS QUANTUM-WELLS
VOILLOT, F
MADHUKAR, A
KIM, JY
CHEN, P
CHO, NM
TANG, WC
NEWMAN, PG
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (15) : 1009 - 1011

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