IMPROVEMENT OF THE INVERTED GAAS/ALGAAS HETEROINTERFACE

被引：13

作者：

FISCHER, R

MASSELINK, WT

SUN, YL

DRUMMOND, TJ

CHANG, YC

KLEIN, MV

MORKOV, H

ANDERSON, E

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[3] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

[4] MCDONNELL DOUGLAS CORP,ST LOUIS,MO 63166

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1984年 / 2卷 / 02期

关键词：

ALUMINUM GALLIUM ARSENIDE - MODULATION DOPED STRUCTURES - QUANTUM WELL STRUCTURES;

D O I：

10.1116/1.582770

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：170 / 174

页数：5

共 16 条

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[2] DUGGAN G, 1982, J PHYS, V5, P129
[3] DURMMOND TJ, 1983, APPL PHYS LETT, V42, P615
[4] GROWTH OF AL0.3GA0.7AS BY MOLECULAR-BEAM EPITAXY IN THE FORBIDDEN TEMPERATURE-RANGE USING AS-2
ERICKSON, LP
MATTORD, TJ
PALMBERG, PW
FISCHER, R
MORKOC, H
[J]. ELECTRONICS LETTERS, 1983, 19 (16) : 632 - 633
[5] IMPROVED ALXGA1-XAS BULK LASERS WITH SUPERLATTICE INTERFACES
FISCHER, R
KLEM, J
DRUMMOND, TJ
KOPP, W
MORKOC, H
ANDERSON, E
PION, M
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 1 - 3
[6] GOSSARD AC, 1982, 2ND INT S MBE CLEAN
[7] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS
KOPP, W
SU, SL
FISCHER, R
LYONS, WG
THORNE, RE
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 563 - 565
[8] OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY
MCAFEE, SR
LANG, DV
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 520 - 522
[9] EXTRINSIC LAYER AT ALXGA1-XAS-GAAS INTERFACES
MILLER, RC
TSANG, WT
MUNTEANU, O
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (04) : 374 - 376
[10] EXTRINSIC PHOTO-LUMINESCENCE FROM GAAS QUANTUM WELLS
MILLER, RC
GOSSARD, AC
TSANG, WT
[J]. PHYSICA B & C, 1983, 117 (MAR): : 714 - 716