CALCULATIONS ON THE PROPERTIES OF HELIUM IN SILICON

被引：18

作者：

KAPLAN, DR ^{[1
]}

WEIGEL, C ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY,INST STUDY DEFECTS SOLIDS,DEPT PHYS,ALBANY,NY 12222

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1979年 / 94卷 / 02期

关键词：

D O I：

10.1002/pssb.2220940204

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electronic properties, lattice location, and diffusion coefficient of helium are investigated in silicon by extended Hückel theory calculations. The electrical properties are unchanged, the helium sits in the tetrahedral interstitial position, and the calculated diffusion coefficient is (1.28 ± 0.11) × 10−3 cm2s−1 exp (− 1.8 eV/kT). Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：359 / 366

页数：8

共 37 条

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