TRANSIENT RECOMBINATION OF EXCESS CARRIERS IN SEMICONDUCTORS

被引：132

作者：

WERTHEIM, GK

机构：

来源：

PHYSICAL REVIEW | 1958年 / 109卷 / 04期

关键词：

D O I：

10.1103/PhysRev.109.1086

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1086 / 1091

页数：6

共 10 条

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[2] HOFFMAN A, 1955, HALBLEITER PROBLEM, V2
[3] TRAPPING OF MINORITY CARRIERS IN SILICON .1. P-TYPE SILICON
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HAYNES, JR
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[4] RITTNER ES, 1956, 1954 P C PHOT ATL CI
[5] RECOMBINATION PROCESSES IN INSULATORS AND SEMICONDUCTORS
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[J]. PHYSICAL REVIEW, 1955, 97 (02): : 322 - 333
[6] CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS
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[J]. PHYSICAL REVIEW, 1957, 105 (02): : 524 - 524
[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
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READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[8] PHOTON-RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES IN GERMANIUM
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SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1954, 94 (06): : 1558 - 1560
[9] ENERGY LEVELS IN ELECTRON-BOMBARDED SILICON
WERTHEIM, GK
[J]. PHYSICAL REVIEW, 1957, 105 (06): : 1730 - 1735
[10] WERTHEIM GK, 1957, B AM PHYS SOC 2, V2, P314