APPLICATIONS OF THIN-FILMS IN MICROELECTRONICS

[1] BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338

[2] BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844

[3] BRODY P, 1968, ELECTRONICS, V41, P100

[4] ENGLISH AT, 1971, FALL M IEEE SAN FRAN

[5] ERSKINE J, PERSONAL COMMUNICATI

[6] THIN-FILM PROCESSES FOR MICROELECTRONIC APPLICATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1390 - &

[7] HARRACH HV, 1972, THIN SOL FI, V13

[8] JORDAN MR, PERSONAL COMMUNICATI

[9] CURRENT-INDUCED MASS TRANSPORT IN ALUMINUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (03) : 335 - &

[10] SUPPRESSION OF PARASITIC THICK-FIELD CONDUCTION MECHANISMS IN SILICON-GATE MOS INTEGRATED CIRCUITS [J]. ELECTRONICS LETTERS, 1971, 7 (01) : 12 - &

[1] BLACK JR, 1969, IEEE T ELECTRON DEVI, VED16, P338

[2] BREWER GR, 1971, IEEE SPECTRUM, V8, P23, DOI 10.1109/MSPEC.1971.5217844

[3] BRODY P, 1968, ELECTRONICS, V41, P100

[4] ENGLISH AT, 1971, FALL M IEEE SAN FRAN

[5] ERSKINE J, PERSONAL COMMUNICATI

[6] THIN-FILM PROCESSES FOR MICROELECTRONIC APPLICATION [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (10): : 1390 - &

[7] HARRACH HV, 1972, THIN SOL FI, V13

[8] JORDAN MR, PERSONAL COMMUNICATI

[9] CURRENT-INDUCED MASS TRANSPORT IN ALUMINUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (03) : 335 - &

[10] SUPPRESSION OF PARASITIC THICK-FIELD CONDUCTION MECHANISMS IN SILICON-GATE MOS INTEGRATED CIRCUITS [J]. ELECTRONICS LETTERS, 1971, 7 (01) : 12 - &